HC8050 Datasheet PDF - Shantou Huashan Electronic Devices
Part Number | HC8050 | |
Description | NPN Epitaxial Silicon Transistor | |
Manufacturers | Shantou Huashan Electronic Devices | |
Logo | ||
There is a preview and HC8050 download ( pdf file ) link at the bottom of this page. Total 2 Pages |
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HC8050
█ NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation…………………………………1W
VCBO——Collector-Base Voltage………………………………40V
VCEO——Collector-Emitter Voltage……………………………25V
VEBO——Emitter-Base Voltage………………………………6V
IC——Collector Current………………………………………1.5A
TO-92
1―Emitter,E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
ICBO
IEBO
HFE
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VBE
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Base- Emitter Voltage
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Current Gain-Bandwidth Product
Min Typ Max Unit
Test Conditions
0.1 μA VCB=35V, IE=0
0.1 μA VEB=6V, IC=0
85 500
VCE=1V, IC=100mA
40 VCE=1V, IC=800mA
1 V VCE=1V, IC=10mA
0.5 V IC=800mA, IB=80mA
1.2 V IC=800mA,IB=80mA
40 V IC=100μA,IE=0
25 V IC=2mA,IB=0
6 V IE=100μA,IC=0
100 MHz VCE=10V, IC=50mA
█ hFE Classification
B
85—160
C
120—200
D
160—300
E
270—500
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HC8050 electronic component. |
Information | Total 2 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ HC8050.PDF Datasheet ] |
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