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PDF AS29LV160 Data sheet ( Hoja de datos )

Número de pieza AS29LV160
Descripción 3V 2M x 8 / 1M x 16 CMOS Flash EEPROM
Fabricantes Alliance Semiconductor 
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• Organization: 2M×8 / 1M×16
• Sector architecture
- One 16K; two 8K; one 32K; and thirty-one 64K byte sectors
- One 8K; two 4K; one 16K; and thirty-one 32K word sectors
- Boot code sector architecture—T (top) or B (bottom)
- Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm
- Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
- Automatically preprograms/erases chip or specified
sectors
• Hardware RESET pin
- Resets internal state machine to read mode
• Low power consumption
- 200 nA typical automatic sleep mode current
- 200 nA typical standby current
- 10 mA typical read current
• JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO (availability TBD)
• CFI (Common Flash Interface) compliant
• Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
- RY/BY output
• Erase suspend/resume
- Supports reading data from or programming data to a
sector not being erased
• Low VCC write lock-out below 1.5V
• 10 year data retention at 150C
• 100,000 write/erase cycle endurance
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VCC
VSS
RESET
RY/BY
WE
BYTE
Program/erase
control
Command
register
CE
OE
Sector protect/
erase voltage
switches
Erase voltage
generator
Program voltage
generator
Chip enable
Output enable
Logic
DQ0–DQ15 (A-1)
3LQ DUUDQJHPHQW
48-pin TSOP
Input/output
buffers
STB Data latch
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VCC detector
Timer
STB
A0–A19
Y decoder
X decoder
Y gating
Cell matrix
44-pin SO
Reset
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
VSS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 WE
43 A19
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BYTE
32 VSS
31 DQ15/A-1
30 DQ7
29 DQ14
28 DQ6
27 DQ13
26 DQ5
25 DQ12
24 DQ4
23 VCC
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Maximum access time
Maximum chip enable access time
Maximum output enable access time
29LV160-70 29LV160-80 29LV160-90 29LV160-120 Unit
tAA 70
tCE 70
tOE 30
80 90 120 ns
80 90 120 ns
30 35 50 ns
8/30/01; V.0.9.5
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AS29LV160 pdf
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Bottom boot sector architecture (AS29LV160B)
Top boot sector architecture (AS29LV160T)
Sector
×8
Size
×16 (Kbytes)
×8
Size
×16 (Kbytes)
19 100000-10FFFF 80000-87FFF 64
130000-13FFFF 98000-9FFFF
64
20 110000-11FFFF 88000-8FFFF
64
140000-14FFFF A0000-A7FFF
64
21 120000-12FFFF 90000-97FFF 64
150000-15FFFF A8000-AFFFF
64
22 130000-13FFFF 98000-9FFFF 64
160000-16FFFF B0000-B7FFF
64
23 140000-14FFFF A0000-A7FFF 64
170000-17FFFF B8000-BFFFF
64
24 150000-15FFFF A8000-AFFFF 64
180000-18FFFF C0000-C7FFF
64
25 160000-16FFFF B0000-B7FFF 64
190000-19FFFF C8000-CFFFF
64
26 170000-17FFFF B8000-BFFFF 64
1A0000-1AFFFF D0000-D7FFF
64
27 180000-18FFFF C0000-C7FFF 64
1B0000-1BFFFF D8000-DFFFF
64
28 190000-19FFFF C8000-CFFFF 64
1C0000-1CFFFF E0000-E7FFF
64
29 1A0000-1AFFFF D0000-D7FFF 64
1D0000-1DFFFF E8000-EFFFF
64
30 1B0000-1BFFFF D8000-DFFFF 64
1E0000-1EFFFF
F0000-F7FFF
64
31 1C0000-1CFFFF E0000-E7FFF
64
1F0000-1F7FFF
F8000-FBFFF
32
32 1D0000-1DFFFF E8000-EFFFF
64
1F8000-1F9FFF FC000-FCFFF
8
33 1E0000-1EFFFF F0000-F7FFF 64
1FA000-1FBFFF FD000-FDFFF
8
34 1F0000-1FFFFF F8000-FFFFF
64
1FC000-1FFFFF
FE000-FFFFF
16
In word mode, there are one 8K word, two 4K word, one 16K word, and fifteen 32K word sectors. Address range is A19–A-1 if BYTE = VIL; address range is
A19–A0 if BYTE = VIH.
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Bottom boot sector architecture
Sector
(AS29LV160B)
A19 A18 A17 A16 A15 A14 A13
0 0 0 00 0 0 0
1 0 0 00 0 0 1
2 0 0 00 0 0 1
3 0 0 00 0 1 X
4 0 0 00 1 X X
5 0 0 01 0 X X
6 0 0 01 1 X X
7 0 0 10 0 X X
8 0 0 10 1 X X
9 0 0 11 0 X X
10 0 0 1 1 1 X X
11 0 1 0 0 0 X X
A12
X
0
1
X
X
X
X
X
X
X
X
X
Top boot sector architecture
(AS29LV160T)
A19 A18 A17 A16 A15 A14 A13 A12
0 0 0 0 0 XXX
0 0 0 0 1 XXX
0 0 0 1 0 XXX
0 0 0 1 1 XXX
0 0 1 0 0 XXX
0 0 1 0 1 XXX
0 0 1 1 0 XXX
0 0 1 1 1 XXX
0 1 0 0 0 XXX
0 1 0 0 1 XXX
0 1 0 1 0 XXX
0 1 0 1 1 XXX
8/30/01; V.0.9.5
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AS29LV160 arduino
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Item Description
Erase Suspend allows interruption of sector erase operations to read data from or program data to a
sector not being erased. Erase suspend applies only during sector erase operations, including the
time-out period. Writing an Erase Suspend command during sector erase time-out results in
immediate termination of the time-out period and suspension of erase operation.
AS29LV160 ignores any commands during erase suspend other than Read/Reset, Program or Erase
Resume commands. Writing the Erase Resume Command continues erase operations. Addresses are
Don’t Care when writing Erase Suspend or Erase Resume commands.
Erase Suspend
AS29LV160 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.
To determine completion of erase suspend, either check DQ6 after selecting an address of a sector
not being erased, or poll RY/BY. Check DQ2 in conjunction with DQ6 to determine if a sector is
being erased. AS29LV160 ignores redundant writes of Erase Suspend.
While in erase-suspend mode, AS29LV160 allows reading data (erase-suspend-read mode) from or
programming data (erase-suspend-program mode) to any sector not undergoing sector erase;
these operations are treated as standard read or standard programming mode. AS29LV160 defaults
to erase-suspend-read mode while an erase operation has been suspended.
Write the Resume command 30h to continue operation of sector erase. AS29LV160 ignores
redundant writes of the Resume command. AS29LV160 permits multiple suspend/resume
operations during sector erase.
Sector Protect
When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are activated
for about <1 µs. When attempting to erase a protected sector, DATA polling and
Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode
without altering the specified sectors.
8/30/01; V.0.9.5
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