FZ1200R12KE3 Datasheet PDF - Eupec
Part Number | FZ1200R12KE3 | |
Description | IGBT Power Module | |
Manufacturers | Eupec | |
Logo | ||
There is a preview and FZ1200R12KE3 download ( pdf file ) link at the bottom of this page. Total 9 Pages |
Preview 1 page No Preview Available ! Technische Information / technical information
IGBT-Module
IGBT-Modules
FZ1200R12KE3
Höchstzulässige Werte / maximum rated values
vorläufige Daten
preliminary data
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Tvj= 25°C
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Tc= 80°C
Tc= 25°C
tp= 1ms, Tc= 80°C
Gesamt Verlustleistung
total power dissipation
Tc= 25°C; Transistor
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
tp= 1ms
Grenzlastintegral
I²t value
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
VCES
IC, nom
IC
ICRM
Ptot
VGES
IF
IFRM
I²t
VISOL
1200
1200
1700
2400
5,6
+/- 20
1200
2400
300
2,5
V
A
A
A
kW
V
A
A
k A²s
kV
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter satration voltage
IC= 1200A, VGE= 15V, Tvj= 25°C,
IC= 1200A, VGE= 15V, Tvj= 125°C,
Gate Schwellenspannung
gate threshold voltage
IC= 48mA, VCE= VGE, Tvj= 25°C,
Gateladung
gate charge
VGE= -15V...+15V; VCE=...V
Eingangskapazität
input capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Rückwirkungskapazität
reverse transfer capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Kollektor Emitter Reststrom
collector emitter cut off current
VCE= 1200V, VGE= 0V, Tvj= 25°C,
Gate Emitter Reststrom
gate emitter leakage current
VCE= 0V, VGE= 20V, Tvj= 25°C
min. typ. max.
VCEsat
-
-
1,7 2,15
2 t.b.d.
VGE(th)
5
5,8 6,5
V
V
V
QG - 11,5 - µC
Cies - 86
- nF
Cres
-
4
- nF
ICES
-
- 5 mA
IGES
-
- 400 nA
prepared by: MOD-D2; Mark Münzer
approved: SM TM; Christoph Lübke
date of publication: 2002-07-29
revision: 2.0
1 (8)
DB_FZ1200R12KE3_2.0.xls
2002-07-29
|
|
Technische Information / technical information
IGBT-Module
IGBT-Modules
FZ1200R12KE3
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
vorläufige Daten
preliminary data
IC= f(VGE)
VCE= 20V
2400
2100
1800
1500
1200
900
600
300
0
5
Tvj=25°C
Tvj=125°C
6 7 8 9 10 11 12 13
VGE [V]
Durchlasskennlinie der Inversdiode (typisch)
forward caracteristic of inverse diode (typical)
IF= f(VF)
2400
2100
1800
1500
Tvj = 25°C
Tvj = 125°C
1200
900
600
300
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
VF [V]
5 (8)
DB_FZ1200R12KE3_2.0.xls
2002-07-29
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FZ1200R12KE3 electronic component. |
Information | Total 9 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ FZ1200R12KE3.PDF Datasheet ] |
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