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Datasheet 0809LD60P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 0809LD60P | 60 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE
0809LD60P
60 WATT, 28V, 1 GHz LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization |  GHZ Technology | data |
080 Datasheet ( Hoja de datos ) - resultados coincidentes |
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| 1 | 08003GOA | Silicon Controlled Rectifier Microsemi Corporation rectifier | | |
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| 4 | 08003GOB | Silicon Controlled Rectifier Microsemi Corporation rectifier | | |
| 5 | 08003GOC | Silicon Controlled Rectifier Microsemi Corporation rectifier | | |
| 6 | 08003GOC | Silicon Controlled Rectifier Microsemi Corporation rectifier | | |
| 7 | 08003GOD | Silicon Controlled Rectifier Microsemi Corporation rectifier | |
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