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Número de pieza | 0809LD30P | |
Descripción | 30 Watt / 28V / 1 Ghz LDMOS FET | |
Fabricantes | GHZ Technology | |
Logotipo | ||
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No Preview Available ! R.0.2P.991602-BEHRE
0809LD30P
30 WATT, 28V, 1 GHz
LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD30P is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
CASE OUTLINE
55QU
Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (Pd)
Thermal Resistance (θJC)
Voltage and Current
Drain-Source (VDSS)
Gate-Source (VGS)
Temperatures
Storage Temperature
Operating Junction Temperature
110 W
1.5°C/W
65V
±20V
-65 to +200°C
+200°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
ΒVdss
Idss
Igss
Vgs(th)
Vds(on)
gFS
Ciss
Crss
Coss
Drain-Source Breakdown
Vgs = 0V, Id = 2ma
Drain-Source Leakage Current Vds = 28V, Vgs= 0V
65 70
Gate-Source Leakage Current Vgs = 20V, Vds = 0V
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Vds = 10V, Id = 10ma
Vgs = 10V, Id = 2A
Vds = 10V, Id = 3A
Vds = 28V, Vgs = 0V, F = 1 MHz
Vds = 28V, Vgs = 0V, F = 1 MHz
Vds = 28V, Vgs = 0V, F = 1 MHz
2
4
1.0
1.4
60
2.5
32
1
1
5
V
A
A
V
V
S
pF
pF
pF
FUNCTIONAL CHARACTERISTICS @ 25°C
GPS
ηd
IMD3
Ψ
Common Source Power Gain
Drain Efficiency
Intermodulation Distortion,
3rd Order
Load Mismatch
Vds = 28V, Idq = 0.15A,
F = 900MHz, Pout = 30W
Vds = 28V, Idq = 0.15A,
F = 900MHz, Pout = 30W
Vds = 28V, Idq = 0.3A,
Pout =30WPEP, F1 = 900 MHz,
F2 = 900.1 MHz
Vds = 28V, Idq = 0.15A,
F = 900MHz, Pout = 30W
14 dB
50 %
-30 dBc
10:1
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 0809LD30P.PDF ] |
Número de pieza | Descripción | Fabricantes |
0809LD30 | 30 Watt / 28V / 1 Ghz LDMOS FET | GHZ Technology |
0809LD30P | 30 Watt / 28V / 1 Ghz LDMOS FET | GHZ Technology |
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