DataSheet39.com

What is IRG4BC20F?

This electronic component, produced by the manufacturer "IRF", performs the same function as "INSULATED GATE BIPOLAR TRANSISTOR".


IRG4BC20F Datasheet PDF - IRF

Part Number IRG4BC20F
Description INSULATED GATE BIPOLAR TRANSISTOR
Manufacturers IRF 
Logo IRF Logo 


There is a preview and IRG4BC20F download ( pdf file ) link at the bottom of this page.





Total 8 Pages



Preview 1 page

No Preview Available ! IRG4BC20F datasheet, circuit

PD - 91602A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20F
Fast Speed IGBT
Features
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
16
9.0
64
64
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000

line_dark_gray
IRG4BC20F equivalent
1000
800
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600 Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20F
20
VCC = 400V
I C = 9.0A
16
12
8
4
0
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.72 VCC = 480V
VGE = 15V
TJ = 25 ° C
0.71 IC = 9.0A
0.70
0.68
0.67
0.66
0
10 20 30 40
RG , Gate Resistance (Ohm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = 50Ohm
VGE = 15V
VCC = 480V
1
IC = 18 A
IC = 9.09 AA
IC = 4.5 A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRG4BC20F electronic component.


Information Total 8 Pages
Link URL [ Copy URL to Clipboard ]
Download [ IRG4BC20F.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
IRG4BC20FThe function is INSULATED GATE BIPOLAR TRANSISTOR. IRFIRF
IRG4BC20FDThe function is INSULATED GATE BIPOLAR TRANSISTOR. IRFIRF
IRG4BC20FD-SThe function is INSULATED GATE BIPOLAR TRANSISTOR. IRFIRF

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

IRG4     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search