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PDF K2717 Data sheet ( Hoja de datos )
| Número de pieza | K2717 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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2SK2717
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2717
DC−DC Converter and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.)
l High forward transfer admittance : |Yfs| = 4.4 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 720 V)
l Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
900
900
±30
5
15
45
595
5
4.5
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
2.78
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02
1 page  
2SK2717
RG = 25 Ω
VDD = 90 V, L = 43.6 mH
EAS
=
1
2
× L × I2
× çæ
è
BVDSS
BVDSS - VDD
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ø
5 2002-09-02
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2717.PDF ] | |
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