(PDF) H649A Datasheet - Low Frequancy Power Amplifier

Número de pieza	H649A
Descripción	Low Frequancy Power Amplifier
Fabricantes	Shantou Huashan
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No Preview Available ! Shantou Huashan Electronic Devices Co.,Ltd. LOW FREQUANCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55~150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 20W PC Collector Dissipation TA=25 1W VCBO Collector-Base Voltage -180V VCEO Collector-Emitter Voltage -160V VEBO Emitter-Base Voltage -5V IC Collector Current DC -1.5A PNP SILICON TRANSISTOR H649A TO-126ML 1 Emitter E 2 Collector C 3 Base B Electrical Characteristics Ta=25 Symbol Parameter Min Typ Max Unit Test Conditions HFE 1 DC Current Gain 60 200 VCE= -5V, IC= -150mA HFE 2 30 VCE(sat) Collector- Emitter Saturation Voltage BVCBO Collector-Base Breakdown Voltage -180 BVCEO Collector-Emitter Breakdown Voltage -160 VCE= -5V, IC= -500mA -1 V IC= -500mA, IB= -50mA V IC= -1mA, IE=0 V IC= -10mA, IB=0 BVEBO Emitter- Base Breakdown Voltage -5 V IE= -1mA, IC=0 ICBO fT Cob Collector-Base Cutoff Current Current Gain- Bandwidth Product Output Capacitance -10 A VCB= -160V, IE=0 140 MHz VCE=-5V, IC=-150mA 27 pF VCB=-10V,IE=0,f=1MHz hFE Classification B C 60 120 100 200 1 page

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PDF H649A Data sheet ( Hoja de datos )