DIM1200FSM17-A000 Datasheet PDF - Dynex
Part Number | DIM1200FSM17-A000 | |
Description | Single Switch IGBT Module | |
Manufacturers | Dynex | |
Logo | ||
There is a preview and DIM1200FSM17-A000 download ( pdf file ) link at the bottom of this page. Total 10 Pages |
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Replaces May 2001, version DS5456-1.1
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM1200FSM17-A000
Single Switch IGBT Module
DS5456-2.0 March 2002
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
1200A
IC(PK)
(max)
2400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM1200FSM17-A000 is a single switch 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200FSM17-A000
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
Aux E
E1
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
EON
Q
g
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM1200FSM17-A000
Test Conditions
IC = 1200A
V
GE
=
±15V
VCE = 900V
RG(ON) = RG(OFF) =1.8Ω
L ~ 60nH
IF = 1200, VR = 50% VCES,
dI /dt
F
=
6000A/µs
Min. Typ. Max. Units
- 1350 -
ns
- 200 - ns
- 350 - mJ
- 300 - ns
- 250 - ns
- 280 - mJ
- 14 - µC
- 400 - µC
- 850 -
A
- 200 - mJ
Test Conditions
IC = 1200A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) =1.8Ω
L ~ 60nH
IF = 1200, VR = 50% VCES,
dIF/dt = 5500A/µs
Min. Typ. Max. Units
- 1550 -
ns
- 250 - ns
- 550 - mJ
- 400 - ns
- 250 - ns
- 450 - mJ
- 600 - µC
- 950 -
A
- 400 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DIM1200FSM17-A000 electronic component. |
Information | Total 10 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ DIM1200FSM17-A000.PDF Datasheet ] |
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