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Datasheet BB179 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BB179 | UHF variable capacitance diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB179 UHF variable capacitance diode
Product specification 1997 Nov 13
Philips Semiconductors
Product specification
UHF variable capacitance diode
FEATURES • Excellent linearity • Excellent matching to 2% DMA • Ultra small plastic SMD package � |  Philipss | diode |
| 2 | BB179 | UHF variable capacitance diode |  Leshan Radio Company | diode |
| 3 | BB179 | UHF VARIABLE CAPACITANCE DIODE UNISONIC TECHNOLOGIES CO., LTD BB179
Preliminary DIODE
UHF VARIABLE CAPACITANCE DIODE
DESCRIPTION
2 1 SOD-523
The UTC BB179 is a planar technology variable capacitance diode providing the designers excellent matching performance, low series resistance and great linearity. The UTC BB179 is suita |  Unisonic Technologies | diode |
| 4 | BB179B | UHF variable capacitance diode
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB179B UHF variable capacitance diode
Product specification 1997 Nov 13
Philips Semiconductors Product specification
UHF variable capacitance diode
FEATURES • Excellent linearity • Excellent matching to 2% | Philipss | diode |
| 5 | BB179B | UHF variable capacitance diode
LESHAN RADIO COMPANY, LTD.
UHF variable capacitance diode
FEATURES · Excellent linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C28: 2.1 pF; ratio: 9 · Low series resistance. APPLICATIONS · Electronic tuning in UHF television tuners · Voltage | Leshan Radio Company | diode |
BB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BB101C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-505 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand  Hitachi amplifier | | |
| 2 | BB101M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB101M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-504 1st. Edition Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand Hitachi amplifier | | |
| 3 | BB102C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-588 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
| 4 | BB102M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-587 (Z) 1st. Edition November 1997 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing Hitachi amplifier | | |
| 5 | BB105 | Silicon Planar Signal Diodes Iskra Semic diode | | |
| 6 | BB105A | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
 Tele Fun Ken diode | | |
| 7 | BB105B | (BB105A/B/G) Diodes Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Tele Fun Ken diode | |
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