2N1131L Datasheet PDF - Microsemi
| Part Number | 2N1131L | |
| Description | LOW POWER PNP SILICON TRANSISTOR | |
| Manufacturers | Microsemi | |
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TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
Devices
2N1131
2N1131L
2N1132
2N1132L
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Temperature Range
1) Derate linearly 3.4 mW/0C for TA ≥ +250C
2) Derate linearly 11.4 mW/0C for TC ≥ +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tj
All Units
40
50
5.0
600
0.6
2.0
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
W
°C
TO-39*
2N1131, 2N1132
TO-5*
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 10 µAdc
V(BR)CBO
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
Collector-Emitter Cutoff Current
VCE = 50 Vdc, RBE ≤ 10 ohms
ICER
Collector-Base Cutoff Current
VCB = 50 Vdc
ICBO
VCB = 30 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
2N1311L, 2N1312L
*See appendix A for
package outline
Max.
Unit
40 Vdc
Vdc
50
100 µAdc
mAdc
10
10 µAdc
1.0
120101
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N1131L electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2N1131L.PDF Datasheet ] | |
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