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2MBI100NE-120 Datasheet PDF - Fuji

Part Number 2MBI100NE-120
Description IGBT MODULE ( N series )
Manufacturers Fuji 
Logo Fuji Logo 

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IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
100
200
100
200
780
+150
-40 +125
A
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *2
2500
3.5
4.5
V
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 4.5 Nm (M6)
Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
ICES
Gate-Emitter Leackage Current
IGES
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Saturation Voltage
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse Transfer capacitance
Cres
Turn-on Time
tON
tr
Turn-off Time
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=100mA
VGE=15V IC=100A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=100A
VGE=± 15V
RG=9.1
IF=100A VGE=0V
IF=100A
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
16000
5800
5160
0.65
0.25
0.85
0.35
Max.
2.0
30
7.5
3.3
1.2
0.6
1.5
0.5
3.0
350
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.025
Max.
0.16
0.43
Units
°C/W



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Part NumberDescriptionManufacturers
2MBI100NE-120The function is IGBT MODULE ( N series ).Fuji
Fuji

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