DataSheet39.com

What is 2EZ110?

This electronic component, produced by the manufacturer "Pan Jit International", performs the same function as "GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)".


2EZ110 Datasheet PDF - Pan Jit International

Part Number 2EZ110
Description GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)
Manufacturers Pan Jit International 
Logo Pan Jit International Logo 


There is a preview and 2EZ110 download ( pdf file ) link at the bottom of this page.





Total 5 Pages



Preview 1 page

No Preview Available ! 2EZ110 datasheet, circuit

2EZ11 THRU 2EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts
FEATURES
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Excellent clamping capability
l Typical ID less than 1 £gA above 11V
l High temperature soldering :
260 ¢J /10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
DO-15
MECHANICAL DATA
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.015 ounce, 0.04 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ¢J ambient temperature unless otherwise specified.
SYMBOL
Peak Pulse Power Dissipation (Note A)
Derate above 75 ¢J
PD
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)
IFSM
Operating Junction and Storage Temperature Range
TJ,TSTG
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
VALUE
2
24
15
UNITS
Watts
mW/¢J
Amps
-55 to +150 ¢J

line_dark_gray
2EZ110 equivalent
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = £c LAPD + TA
£c LA is the lead-to-ambient thermal resistance (¢J /W)
and PD is the power dissipation. The value for £c LA will
vary and depends on the device mounting method.
£c LA is generally 30-40 ¢J /W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + £GTJL
£GTJL is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
£G TJL = £c LAPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ (£GTJL ) may be estimated.
Changes in voltage, Vz, can then be found from:
£GV = £c VZ £GTJ
£c VZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2EZ110 electronic component.


Information Total 5 Pages
Link URL [ Copy URL to Clipboard ]
Download [ 2EZ110.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
2EZ11The function is GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts). Pan Jit InternationalPan Jit International
2EZ110The function is GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts). Pan Jit InternationalPan Jit International
2EZ110D10The function is SILICON ZENER DIODES. EICEIC

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

2EZ1     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search