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Datasheet 29F800 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 29F800 | 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory M29F800AT M29F800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 70ns PROGRAMMING TIME – 8µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location | STMicroelectronics | data |
2 | 29F800 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only / Boot Sector Flash Memory-Die Revision 1 SUPPLEMENT
Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level require | Advanced Micro Devices | cmos |
3 | 29F800 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only / Boot Sector Flash Memory SUPPLEMENT
Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level require | Advanced Micro Devices | cmos |
4 | 29F800 | 8M (1M X 8/512K X 16) BIT FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20841-4E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
s FEATURES
• Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software co | Fujitsu Media Devices Limited | data |
5 | 29F800 | 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY PRELIMINARY
MX29F800T/B
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
FEATURES
• 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current | Macronix International | cmos |
29F Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 29F001TPC | MX29F001TPC
MX29F001T/B
1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES
5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architectur Macronix International data | | |
2 | 29F002 | 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory M29F002BT M29F002BB, M29F002BNT
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs by Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) � STMicroelectronics data | | |
3 | 29F002 | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory PRELIMINARY
Am29F002/Am29F002N
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements s High performance — Access Advanced Micro Devices cmos | | |
4 | 29F002 | 2M (256K X 8) BIT FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20868-3E
FLASH MEMORY
CMOS
2M (256K × 8) BIT
MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90
s FEATURES
• • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible Fujitsu Media Devices Limited data | | |
5 | 29F002 | 2M-BIT [256K x 8] CMOS FLASH MEMORY MX29F002/002N
2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES
• • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming ( Macronix International cmos | | |
6 | 29F010 | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory FINAL
Am29F010
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements s High performance — 45 ns maximum access ti Advanced Micro Devices cmos | | |
7 | 29F010 | 1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical 8 UNIFORM 16 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Prog STMicroelectronics data | |
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Número de pieza | Descripción | Fabricantes | |
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