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PDF SPB04N60C3 Data sheet ( Hoja de datos )
| Número de pieza | SPB04N60C3 | |
| Descripción | Cool MOS Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPB04N60C3 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
0.95
4.5
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO220-3-31
3
12
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP04N60C3
SPB04N60C3
SPA04N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4366
P-TO263-3-2 Q67040-S4407
P-TO220-3-31 Q67040-S4413
Marking
04N60C3
04N60C3
04N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=3.4, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4.5A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_B SPA
4.5
2.8
13.5
130
4.51)
2.81)
13.5
130
0.4 0.4
4.5 4.5
±20 ±20
±30 ±30
50 31
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-10-02
1 page  
1 Power dissipation
Ptot = f (TC)
Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
2 Power dissipation FullPAK
Ptot = f (TC)
SPP04N60C3
55
W
45
40
35
30
25
20
15
10
5
00 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
35
W
25
20
15
10
5
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
10 -1
10
-2
10
0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 1
10 2
10 -1
V 10 3
VDS
Page 5
10
-2
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10ms
DC
10 1
10 2 V 10 3
VDS
2003-10-02
5 Page 
25 Typ. Coss stored energy
Eoss=f(VDS)
3.5
µJ
Final data
2.5
2
1.5
1
0.5
00
100 200 300 400
V
600
VDS
SPP04N60C3, SPB04N60C3
SPA04N60C3
Definition of diodes switching characteristics
Page 11
2003-10-02
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SPB04N60C3.PDF ] | |
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