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Número de pieza | P2N2907A | |
Descripción | Amplifier Transistor | |
Fabricantes | Motorola Inc | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P2N2907A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by P2N2907A/D
Amplifier Transistor
PNP Silicon
COLLECTOR
1
2
BASE
P2N2907A
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–60
–60
–5.0
–600
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –10 V)
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO –60
V(BR)CBO –60
V(BR)EBO –5.0
ICEX
—
ICBO
IEBO
—
—
—
ICEO
—
IBEX
—
—
—
—
–50
–0.01
–10
–10
–10
–50
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
nAdc
nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page PACKAGE DIMENSIONS
R
SEATING
PLANE
AB
P
L
F
K
XX
H
V
G
C
1
N
N
D
J
SECTION X–X
CASE 029–04
(TO–226AA)
ISSUE AD
P2N2907A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.022
F 0.016 0.019
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 –––
L 0.250 –––
N 0.080 0.105
P ––– 0.100
R 0.115 –––
V 0.135 –––
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.41 0.55
0.41 0.48
1.15 1.39
2.42 2.66
0.39 0.50
12.70 –––
6.35 –––
2.04 2.66
––– 2.54
2.93 –––
3.43 –––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet P2N2907A.PDF ] |
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