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PDF P2N2222A Data sheet ( Hoja de datos )
| Número de pieza | P2N2222A | |
| Descripción | Amplifier Transistors(NPN Silicon) | |
| Fabricantes | ON Semiconductor | |
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P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector--Emitter Voltage
VCEO
40
Collector--Base Voltage
VCBO
75
Emitter--Base Voltage
VEBO
6.0
Collector Current -- Continuous
IC 600
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD 625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
--55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
200 °C/W
Thermal Resistance, Junction to Case
RθJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO--92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
P2N2
222A
AYWW G
G
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 5
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
P2N2222AG
TO--92
(Pb--Free)
5000 Units/Bulk
P2N2222ARL1G TO--92 2000/Tape & Ammo
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2222A/D
1 page  
P2N2222A
30
20
Ceb
10
7.0
5.0
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
Ccb
20 30 50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 10. Current--Gain Bandwidth Product
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
1.0 V
0.2
VCE(sat) @ IC/IB = 10
00.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100
IC, COLLECTOR CURRENT (mA)
200
500 1.0 k
Figure 11. “On” Voltages
+0.5
0 RθVC for VCE(sat)
--0.5
--1.0
--1.5
--2.0 RθVB for VBE
--2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
500
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet P2N2222A.PDF ] | |
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