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Datasheet PMN28UN Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PMN28UN | TrenchMOS ultra low level FET PMN28UN
TrenchMOS™ ultra low level FET
M3D302
Rev. 01 — 27 September 2002
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN28UN in SOT457 (TSOP6).
2. Features
s s s s TrenchMOS™ tech |  Philips | data |
PMN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PMN20EN | 6.7A N-channel Trench MOSFET SO T4 57
PMN20EN
30 V, 6.7 A N-channel Trench MOSFET
Rev. 1 — 30 May 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
 NXP Semiconductors mosfet | | |
| 2 | PMN22XN | single N-channel Trench MOSFET SO T4 57
PMN22XN
30 V, single N-channel Trench MOSFET
Rev. 1 — 19 January 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technol NXP Semiconductors mosfet | | |
| 3 | PMN23UN | UTrenchMOS ultra low level FET PMN23UN
µTrenchMOS™ ultra low level FET
M3D302
Rev. 01 — 16 June 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s TrenchMOS™ technology s Very fast switching s Low t NXP Semiconductors data | | |
| 4 | PMN25EN | 6.2A N-channel Trench MOSFET SO T4 57
PMN25EN
30 V, 6.2 A N-channel Trench MOSFET
Rev. 1 — 29 August 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET tec NXP Semiconductors mosfet | | |
| 5 | PMN25UN | 6A N-channel Trench MOSFET SO T4 57
PMN25UN
20 V, 6 A N-channel Trench MOSFET
Rev. 1 — 28 July 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technol NXP Semiconductors mosfet | | |
| 6 | PMN27UN | TrenchMOS ultra low level FET PMN27UN
TrenchMOS™ ultra low level FET
M3D302
Rev. 01 — 27 September 2002
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN27UN in SOT457 (TSOP6).
2. Features
s s s s TrenchMOS™ tech NXP Semiconductors data | | |
| 7 | PMN27UP | MOSFET, Transistor SO T4 57
PMN27UP
20 V, 5.7 A P-channel Trench MOSFET
Rev. 1 — 13 July 2011 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. NXP Semiconductors mosfet | |
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