|
|
Datasheet NTD2955 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NTD2955 | Power MOSFET, Transistor NTD2955 Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these devices are particula | ON | mosfet |
2 | NTD2955 | Power MOSFET, Transistor
NTD2955 Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These | On Semiconductor | mosfet |
3 | NTD2955D | Power MOSFET, Transistor NTD2955 Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these devices are particula | ON | mosfet |
4 | NTD2955G | Power MOSFET, Transistor NTD2955 Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these devices are particula | ON | mosfet |
5 | NTD2955T4 | Power MOSFET, Transistor NTD2955 Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these devices are particula | ON | mosfet |
NTD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NTD | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
2 | NTD | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
3 | NTD08 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
4 | NTD10 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
5 | NTD106B | Thyristor/Diode Module Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
• Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type nu Naina Semiconductor diode | | |
6 | NTD110N02R | Power MOSFET, Transistor NTD110N02R Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� ON mosfet | | |
7 | NTD110N02RG | Power MOSFET, Transistor NTD110N02R Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� ON mosfet | |
Esta página es del resultado de búsqueda del NTD2955. Si pulsa el resultado de búsqueda de NTD2955 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |