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What is MJ15015?

This electronic component, produced by the manufacturer "ON", performs the same function as "15A, 120V, Silicon NPN Transistor".


MJ15015 Datasheet PDF - ON

Part Number MJ15015
Description 15A, 120V, Silicon NPN Transistor
Manufacturers ON 
Logo ON Logo 

It is an NPN bipolar junction transistor.

The MJ15015 is a power transistor designed for use in high-power audio amplifier applications and other high-power switching applications.

Features:

1. Current-Gain-Bandwidth-Product @ IC = 1.0 Adc

2. Safe Operating Area-Rated to 60 V and 120 V, Respectively


There is a preview and MJ15015 download ( pdf file ) link at the bottom of this page.





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2N3055A (NPN),
MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
High−Power Transistors
These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
Current−Gain − Bandwidth−Product @ IC = 1.0 Adc
fT = 0.8 MHz (Min) − NPN
= 2.2 MHz (Min) − PNP
Safe Operating Area − Rated to 60 V and 120 V, Respectively
Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
2N3055A
MJ15015, MJ15016
Collector−Base Voltage
2N3055A
MJ15015, MJ15016
Collector−Emitter Voltage Base
Reversed Biased
2N3055A
MJ15015, MJ15016
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
2N3055A
Symbol
VCEO
VCBO
VCEV
VEBO
IC
IB
PD
Value
60
120
100
200
100
200
7.0
15
7.0
115
0.65
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25_C
MJ15015, MJ15016
Operating and Storage Junction
Temperature Range
TJ, Tstg
180
1.03
−65 to +200
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Max Unit
Thermal Resistance, Junction−to−Case
RqJC 1.52 0.98 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
1
http://onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
2N3055AG
AYWW
MEX
MJ1501xG
AYWW
MEX
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX
= Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N3055A/D

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MJ15015 equivalent
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
NPN
10,000
1000
VCE = 30 V
COLLECTOR CUT−OFF REGION
PNP
1000
VCE = 30 V
100
100
TJ = 150°C
10
100°C
1.0
IC = ICES
0.1 REVERSE
FORWARD
0.01
+0.2
25°C
+0.1 0 −0.1 −0.2 −0.3 −0.4
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015
20
30 ms
−0.5
10
100 ms
1 ms
5
BONDING WIRE LIMIT
100 ms
2 THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
dc
SECOND BREAKDOWN LIMIT
1
10 20
60 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
2N3055A
10 TJ = 150°C
1.0
100°C
0.1
REVERSE
0.01 25°C
IC = ICES
FORWARD
0.001
−0.2
20
10
−0.1 0 +0.1 +0.2 +0.3 +0.4
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 11. MJ15016
+0.5
0.1 ms
5.0
1.0 ms
2.0
1.0
0.5
0.2
15
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100 ms
dc
20 30
60 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
120
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25_C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device
2N3055A
2N3055AG
MJ15015
MJ15015G
MJ15016
MJ15016G
Package
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
Shipping
100 Units / Tray
100 Units / Tray
http://onsemi.com
5


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MJ15015 datasheet


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