PHD96NQ03LT Datasheet PDF - NXP Semiconductors
| Part Number | PHD96NQ03LT | |
| Description | N-channel enhancement mode field-effect transistor | |
| Manufacturers | NXP Semiconductors | |
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PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 03 — 23 October 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP96NQ03LT in SOT78 (TO-220AB)
PHB96NQ03LT in SOT404 (D2-PAK)
PHD96NQ03LT in SOT428 (D-PAK).
2. Features
s Low gate charge
s Low on-state resistance.
3. Applications
s Optimized as a control FET in DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
mb
mb
3 source (s)
mb mounting base,
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
2
1
Top view
3
MBK091
SOT428 (D-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
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Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A; Figure 7
Tj = 25 °C
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr turn-on rise time
td(off)
turn-off delay time
tf turn-off fall time
Source-drain diode
ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 15 V; ID = 12.5 A; VGS = 5 V;
RG = 5.6 Ω; resistive load
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 10 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr recovered charge
Min Typ Max Unit
25 - V
22 - - V
1 1.5 2 V
0.5 - - V
- - 2.3 V
- 0.05 1 µA
- - 500 µA
- 10 100 nA
- 5.6 7.5 mΩ
- 10 13.5 mΩ
- 4.2 4.95 mΩ
- 26.7 - nC
- 8.5 - nC
- 8.4 - nC
- 2200 - pF
- 725 - pF
- 290 - pF
- 18 - ns
- 70 - ns
- 75 - ns
- 70 - ns
- 0.9 1.2 V
- 43 - ns
- 40 - nC
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ PHD96NQ03LT.PDF Datasheet ] | |
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