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PDF PHC2300 Data sheet ( Hoja de datos )
| Número de pieza | PHC2300 | |
| Descripción | Complementary enhancement mode MOS transistors | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PHC2300
Complementary enhancement
mode MOS transistors
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC13b
1997 Oct 24
1 page  
Philips Semiconductors
Complementary enhancement mode
MOS transistors
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Product specification
PHC2300
VALUE
43
UNIT
K/W
102
handbook, full pagewidth
Rth js
(K/W)
10
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
MDA244
P
δ
=
tp
T
10−1
10−6
(10)
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
(1) δ = 1.00.
(6) δ = 0.1.
(2) δ = 0.75.
(7) δ = 0.05.
(3) δ = 0.5.
(8) δ = 0.02.
(4) δ = 0.33.
(9) δ = 0.01.
(5) δ = 0.2.
(10) δ = 0.
Fig.5 Transient thermal resistance from junction to soldering point as a function of pulse time
for N- and P-channels; typical values.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per FET
V(BR)DSS
VGSth
IDSS
drain-source breakdown voltage
N-channel
P-channel
gate-source threshold voltage
VGS = 0; ID = 10 µA
VGS = 0; ID = −10 µA
N-channel
P-channel
drain-source leakage current
VGS = VDS; ID = 1 mA
VGS = VDS; ID = −1 mA
N-channel
P-channel
VGS = 0; VDS = 240 V
VGS = 0; VDS = −240 V
MIN. TYP. MAX. UNIT
300 −
−300 −
0.8 −
−0.8 −
−−
−−
−V
−V
2V
−2 V
100 nA
−100 nA
1997 Oct 24
5
5 Page 
Philips Semiconductors
Complementary enhancement mode
MOS transistors
Product specification
PHC2300
handboo1k,.2h5alfpage
k
1
0.75
0.5
0.25
0
–50
0
MRC236
50 100 Tj (oC) 150
handbook1, h.4alfpage
k
1.2
MBH438
1.0
0.8
0.6
−75 −25 25 75 125 175
Tj (°C)
k = -V----GV----SG---t-Sh---t--ha---t--a--2-t--5--T--°--j-C---
VGSth at VDS = VGS; ID = 1 mA.
Fig.20 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; N-channel, typical values.
k = -V----GV----SG---t-Sh---t--ha---t--a--2-t--5--T--°--j-C---
VGSth at VDS = VGS; ID = −1 mA.
Fig.21 Temperature coefficient of gate-source
threshold voltage as function of junction
temperature; P-channel typical values.
1997 Oct 24
11
11 Page | ||
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| PDF Descargar | [ Datasheet PHC2300.PDF ] | |
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