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PDF PHC21025 Data sheet ( Hoja de datos )
| Número de pieza | PHC21025 | |
| Descripción | Complementary intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
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PHC21025
Complementary intermediate level FET
Rev. 04 — 17 March 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel and P-channel complementary pair enhancement mode
Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This
product is designed and qualified for use in computing, communications, consumer and
industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
Motor and actuator drivers
Power management
Synchronized rectification
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj ≥ 25 °C; Tj ≤ 150 °C;
N-channel
Tj ≥ 25 °C; Tj ≤ 150 °C;
P-channel
Tsp ≤ 80 °C; P-channel
Tsp ≤ 80 °C; N-channel
Tamb = 25 °C
Min
-
-
-
-
[1] -
VGS = -10 V; ID = -1 A;
Tj = 25 °C; P-channel;
see Figure 16; see Figure 19
VGS = 10 V; ID = 2.2 A;
Tj = 25 °C; N-channel;
see Figure 15; see Figure 18
-
-
Typ Max Unit
- 30 V
- -30 V
- -2.3 A
- 3.5 A
- 1W
0.22 0.25 Ω
0.08 0.1 Ω
1 page  
NXP Semiconductors
PHC21025
Complementary intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
Conditions
Min Typ Max Unit
- - 35 K/W
102 mbe152
Rth j-s
(K/W)
10
1
δ=
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
P δ = tp
T
10−1
10−6
0
10−5
10−4
10−3
10−2
10−1
tp
T
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
t
1
PHC21025
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
© NXP B.V. 2011. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
PHC21025
Complementary intermediate level FET
1.2
k
1.1
1.0
0.9
0.8
0.7
0.6
−50
0
mbe138
50 100 150
Tj (°C)
1.8
k
1.6
1.4
1.2
1.0
0.8
0.6
−50
0
mbe139
(1)
(2)
50 100 150
Tj (°C)
Typical VGSth at ID = 1 mA; VDS = VGS = VGSth.
Fig 17. Temperature coefficient of gate-source
threshold voltage
1.8
k
1.6
1.4
Typical RDSon at:
(1) ID = 2.2 A; VGS = 10 V.
(2) ID = 1 A; VGS = 4.5 V.
Fig 18. Temperature coefficient of drain-source
on-state resistance; N-channel
mbe146
(1)
(2)
1.2
1.0
0.8
0.6
−50
0
50 100 150
Tj (°C)
Typical RDSon at:
(1) ID = -1 A; VGS = -10 V.
(2) ID = -0.5 A; VGS = -4.5 V.
Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel
PHC21025
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
© NXP B.V. 2011. All rights reserved.
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| Páginas | Total 16 Páginas | |
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