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PHC20306 Datasheet PDF - NXP

Part Number PHC20306
Description Complementary enhancement mode MOS transistor
Manufacturers NXP 
Logo NXP Logo 



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PHC20306 datasheet, circuit
DISCRETE SEMICONDUCTORS
DATA SHEET
PHC20306
Complementary enhancement
mode MOS transistor
Objective specification
File under Discrete Semiconductors, SC13b
1998 Feb 18

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1 page
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PHC20306 equivalent
Philips Semiconductors
Complementary enhancement
mode MOS transistor
SYMBOL
PARAMETER
QGD
gate-drain charge
N-channel
P-channel
Switching times
td(on)
turn-on delay time
N-channel
P-channel
tr rise time
N-channel
P-channel
ton turn-on switching time
N-channel
P-channel
td(off)
turn-off delay time
N-channel
P-channel
tf fall time
N-channel
P-channel
toff turn-off switching time
N-channel
P-channel
Source-drain diode
VSD source-drain diode forward
voltage
N-channel
P-channel
trr reverse recovery time
N-channel
P-channel
CONDITIONS
VDD = 15 V; ID = 4 A
VDD = 15 V; ID = 2.8 A
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; Rgen = 6
VGD = 0; IS =1.25 A
VGD = 0; IS = 1.25 A
IS = 1.25 A; di/dt = 100 A/µs
IS = 1.25 A; di/dt = 100 A/µs
1998 Feb 18
5
Objective specification
PHC20306
MIN. TYP. MAX. UNIT
6.5 nC
tbf nC
8 ns
tbf ns
21 ns
tbf ns
17 25 ns
tbf tbf ns
19 ns
tbf ns
9 ns
tbf ns
40 60 ns
tbf tbf ns
−−1V
− − −1.3 V
45 ns
tbf ns

5 Page
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Information Total 8 Pages
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