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PDF MA7001 Data sheet ( Hoja de datos )

Número de pieza MA7001
Descripción Radiation Hard 512x9 Bit FIFO
Fabricantes Dynex 
Logotipo Dynex Logotipo



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No Preview Available ! MA7001 Hoja de datos, Descripción, Manual

Replaces June 1999 version, DS3519-4.0
MAM7A0700011
Radiation Hard 512x9 Bit FIFO
DS3519-5.0 January 2000
The MA7001 512 x 9 FIFO is manufactured using Dynex
Semiconductor's CMOS-SOS high performance, radiation
hard, 3µm technology.
The Dynex Semiconductor Silicon-on-Sapphire process
provides significant advantages over bulk silicon substrate
technologies In addition to very good total dose hardness and
neutron hardness >1015n/cm2, the Dynex Semiconductor
technology provides very high transient gamma and single
event upset performance without compromising speed of
operation The Sapphire substrate also eliminates latch-up
giving greater flexibility of use in electrically severe
environments.
The MA7001 implements a First-ln First-Out algorithm that
reads and writes data on a first-in first-out basis. The dual-port
static RAM memory is organised as 512 words of 9 bits (8 bit
data and 1 bit for parity or control purposes).
Sequential read and write accesses are achieved using a
ring pointer architecture that requires no external addressing
information. Data is toggled in and out of the device by using
the WRITE (W) and READ (R) pins.
Full and Empty status flags prevent data overflow and
underflow. Expansion logic on the device allows for unlimited
expansion capability in both word size and depth. A
RETRANSMIT (RT) feature allows for reset of the read pointer
to its initial position to allow retransmission of data.
The device is designed for applications requiring
asynchronous and simultaneous read/write in multiprocessing
and rate buffering (sourcing and sinking data at different rates
eg. interfacing fast processors and slow peripherals).
FEATURES
s Radiation Hard CMOS-SOS Technology
s Fast Access Time 60ns Typical
s Single 5V Supply
s Inputs Fully TTL and CMOS Compatible
s -55°C to +125°C Operation
Figure 1: Block Diagram
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MA7001 pdf
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
See Figure 7
Figure 5: AC Test Conditions
MA7001
Output
under test
Test Point
50pF*
LOAD 1
* Includes jig
and scope
capacitances
Figure 7: Output Load
Symbol Parameter
CIN
COUT
Input Capacltance (Note 1)
Output Capacitance (Notes 1 and 2)
NOTES:
1. Characterized values, not currently tested.
2. With output deselected.
Conditions
VIN = 0V
VOUT = 0V
Figure 6: Capacitance
Max.
7
12
Unit
pF
pF
TRUTH TABLES
Operation
Input
Output
Pointer
R W RS RT Xl EF FF Data Read
Write
Reset
110x001Z
Zero
Zero
Retransmit*
1110011Z
Zero
N/C
Read
10 x 1 1 0 1 1 valid Increment
N/C
Read
x x 11001Z
N/C
N/C
Write
x 10 1 1 0 x 1 x
N/C Increment
Write
xx11010x
N/C
N/C
* Only available if less than 512 writes since last reset.
Figure 8: Single Device or Width Expansion: Read, Write, Reset and Retransmit
Operation
Reset First
Reset Rest
Input
Output
Pointer
R W RS FL Xl EF FF Data Read
Write
1100101Z
1101101Z
Zero
Zero
Zero
Zero
NOTES:
1. See Modes of Operation for connections of Xl and XO in depth expansion mode.
2. XI is connected to XO of previous device (Figure 12).
Figure 9: Depth Expansion: Reset and First Load
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MA7001 arduino
MA7001
Figure 20: Write/Read to Empty Flag
Figure 21: Read and Empty Flag
Figure 22: Retransmit Timing
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