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PDF MBRS140LT3 Data sheet ( Hoja de datos )

Número de pieza MBRS140LT3
Descripción Surface Mount Schottky Power Rectifier(SMB Power Mount Power Package)
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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No Preview Available ! MBRS140LT3 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBRS140LT3/D
Advance Information
Surface Mount
Schottky Power Rectifier
MBRS140LT3
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal–to–silicon power
rectifier. Features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency switching power
supplies; free wheeling diodes and polarity protection diodes.
Compact Package with J–Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over–Voltage Protection
Low Forward Voltage Drop
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8
Weight: 95 mg (approximately)
Polarity: Notch in Plastic Body Indicates Cathode Lead
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Available in 12 mm Tape, 2500 Units per 13Reel, Add “T3” Suffix to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Marking: B14L
CASE 403A–03
SMB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TC = 110°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 110°C)
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
40
1.0
2.0
40
Volts
Amps
Amps
Amps
Storage / Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Lead (2)
Thermal Resistance — Junction–to–Ambient (2)
ELECTRICAL CHARACTERISTICS
Tstg, TC
TJ
dv/dt
RθJL
RθJA
– 55 to +150
– 55 to +125
10,000
24
80
°C
°C
V/ms
°C/W
Maximum Instantaneous Forward Voltage (1)
see Figure 2
(IF = 1.0 A)
(IF = 2.0 A)
VF
TJ = 25°C
0.5
0.6
TJ = 125°C
0.425
0.58
Maximum Instantaneous Reverse Current
see Figure 4
(VR = 40 V)
(VR = 20 V)
IR
TJ = 25°C
0.4
0.02
TJ = 100°C
10
5.0
This document contains information on a new product. Specifications and information herein are subject to change without notice.
(1) Pulse Test: Pulse Width 250 µs, Duty Cycle 2.0%.
(2) Mounted with minimum recommended pad size, PC Board FR4.
Volts
mA
©RMeoctotriofilea,rInDce. 1v9ic97e Data
1

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