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Datasheet K3413-02 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K3413-02 | Two-color detector |  Hamamatsu | detector |
K34 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K3403 | N-Channel MOSFET, 2SK3403
2SK3403
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3403
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 1  Toshiba Semiconductor data | | |
| 2 | K3404 | N-Channel MOSFET, 2SK3404 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3404
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC con  NEC data | | |
| 3 | K3405 | N-Channel MOSFET, 2SK3405 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3405
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC con NEC data | | |
| 4 | K3407 | N-Channel MOSFET, 2SK3407
2SK3407
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407
Switching Regulator Applications
Unit: mm
· · · ·
Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: ID  Toshiba data | | |
| 5 | K3413-01 | Two-color detector Hamamatsu detector | | |
| 6 | K3413-02 | Two-color detector Hamamatsu detector | | |
| 7 | K3413-05 | Two-color detector Hamamatsu detector | |
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