(PDF) H7N0307AB Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H7N0307AB
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi
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No Preview Available ! H7N0307AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB ADE-208-1568A (Z) 2nd. Edition Aug. 2002 D G S 1 2 3 1. Gate 2. Drain (Frange) 3. Source 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 Pulse Test 0.16 0.12 0.08 0.04 0 I D = 10 A 5A 2A 4 8 12 16 20 Gate to Source Voltage V GS (V) H7N0307AB Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 VGS = 4.5 V 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 2 A, 5 A, 10 A 12 V GS = 4.5 V 8 4 10 V 2 A, 5 A, 10 A 0 -40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 30 Tc = -25°C 10 75°C 25°C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current ID (A) Rev.1, Aug. 2002, page 5 of 10 5 Page

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PDF H7N0307AB Data sheet ( Hoja de datos )