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PDF APT1001R1BN Data sheet ( Hoja de datos )
| Número de pieza | APT1001R1BN | |
| Descripción | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
| Fabricantes | Advanced Power Technology | |
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D
G
S
TO-247
APT1001R1BN 1000V 10.5A 1.10Ω
APT1001R3BN 1000V 10.0A 1.30Ω
POWER MOS IV®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT
APT
1001RBN 1001R3BN UNIT
VDSS Drain-Source Voltage
1000
1000
Volts
ID Continuous Drain Current @ TC = 25°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
10.5
42
±30
10
40
Amps
Volts
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
310
2.48
Watts
W/°C
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
BVDSS
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
APT1001R1BN
APT1001R3BN
ID(ON)
On State Drain Current 2
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
APT1001R1BN
APT1001R3BN
Drain-Source On-State Resistance 2
RDS(ON) (VGS = 10V, 0.5 ID [Cont.])
APT1001R1BN
APT1001R3BN
IDSS
IGSS
VGS(TH)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
MIN
1000
1000
10.5
10
2
TYP
MAX UNIT
Volts
Amps
1.10
1.30
250
1000
±100
4
Ohms
µA
nA
Volts
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.40
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page | ||
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