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What is APT1001?

This electronic component, produced by the manufacturer "Advanced Power Technology", performs the same function as "Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs".


APT1001 Datasheet PDF - Advanced Power Technology

Part Number APT1001
Description Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Manufacturers Advanced Power Technology 
Logo Advanced Power Technology Logo 


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APT1001RBLC
APT1001RSLC
1000V 11A 1.000W
POWER MOS VITM
BLC
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize Ciss and Crss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
TO-247
D3PAK
SLC
• Identical Specifications: TO-247 or Surface Mount D3PAK Package
D
• Lower Gate Charge & Capacitance
• 100% Avalanche Tested
• Easier To Drive
• Faster switching
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
ALContinuous Drain Current @ TC = 25°C
ICPulsed Drain Current 1
NGate-Source Voltage Continuous
CHGate-Source Voltage Transient
TE NTotal Power Dissipation @ TC = 25°C
D IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
A RAvalanche Current 1 (Repetitive and Non-Repetitive)
DV FORepetitive Avalanche Energy 1
A INSingle Pulse Avalanche Energy 4
APT1001R
1000
11
44
±30
±40
280
2.24
-55 to 150
300
26
30
1210
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
1000
11
3
1.00
25
250
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Amps
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for APT1001 electronic component.


Information Total 2 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
APT1001The function is Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. Advanced Power TechnologyAdvanced Power Technology
APT1001The function is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS. Advanced Power TechnologyAdvanced Power Technology
APT1001R1AVRThe function is Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power TechnologyAdvanced Power Technology

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