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PDF APM7318 Data sheet ( Hoja de datos )
| Número de pieza | APM7318 | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Etc | |
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APM7318
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 20V/8A , RDS(ON)=15mΩ(typ.) @ VGS=4.5V
RDS(ON)=30mΩ(typ.) @ VGS=2.5V
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SO-8 Package
Applications
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
D1 D1
D2 D2
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G1
G2
S1 S2
N-Channel MOSFET N-Channel MOSFET
Ordering and Marking Information
APM7318
APM7318 K :
Handling Code
Temp. Range
Package Code
APM7318
XXXXX
Package Code
K : SO-8
Operation Junction Tem p. Range
C : -55 to 150° C
Handling Code
TR : Tape & Reel
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2003
1
www.anpec.com.tw
1 page  
APM7318
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
30
10
TJ=150°C
1
TJ=25°C
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD-Source to Drain Voltage
1.4
80
70
60
50
40
30
20
10
0
0.01
Single Pulse Power
0.1 1
Time (sec)
10 30
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
0.01 0.1
Square Wave Pulse Duration (sec)
1
10 30
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2003
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APM7318.PDF ] | |
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