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PDF UPD5702 Data sheet ( Hoja de datos )
| Número de pieza | UPD5702 | |
| Descripción | 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
µPD5702TU
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
DESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS
and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin
L2MM (Lead Less Mini Mold) plastic package.
FEATURES
• Output Power
: Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage
: VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.
APPLICATIONS
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)
ORDERING INFORMATION
Part Number
µPD5702TU-E2
Package
8-pin Lead-Less Minimold
Marking
5702
Supplying Form
• 8 mm wide embossed taping
• Pin 5, 6, 7, 8 indicates pull-out direction of tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPD5702TU
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10455EJ01V0DS (1st edition)
Date Published November 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003
1 page  
µPD5702TU
TYPICAL CHARACTERISTICS (Preliminary)
(f = 1.9 GHz, VDS = 3 V, VGS = 2 V, TA = +25°C, unless otherwise specified)
OUTPUT POWER vs. INPUT POWER
35
POWER GAIN vs. INPUT POWER
35
30 30
25 25
20 20
15 15
10 10
55
00
–5
–15
–10
–5
0
5 10
–5
–15
–10
–5
0
5 10
Input Power Pin (dBm)
Input Power Pin (dBm)
0
–10
–20
–30
–40
–50
–60
–70
–80
–15
Padj vs. INPUT POWER
Padj1 (+600 kHz)
Padj1 (–600 kHz)
Padj2 (+900 kHz)
Padj2 (–900 kHz)
–10 –5
0
5
Input Power Pin (dBm)
10
Remark The graphs indicate nominal characteristics.
DRAIN CURRENT vs. INPUT POWER
250
200
150
100
50
0
–15 –10
–5
0
5
Input Power Pin (dBm)
10
Preliminary Data Sheet PU10455EJ01V0DS
5
5 Page 
µPD5702TU
For further information, please contact
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-558-2120 FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0310
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet UPD5702.PDF ] | |
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