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PDF ZXM61P02 Data sheet ( Hoja de datos )
| Número de pieza | ZXM61P02 | |
| Descripción | 20V P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZXM61P02 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P02F
SUMMARY
V(BR)DSS=-20V; RDS(ON)=0.60⍀; ID=-0.9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM61P02FTA
7
8mm embossed
3000 units
ZXM61P02FTC
13
8mm embossed
10000 units
DEVICE MARKING
• P02
SOT23
Top View
PROVISIONAL ISSUE A - JULY 1999
73
1 page  
10
+25°C
1
TYPICAL CHARACTERISTICS
4.5V 4V
5V
-VGS
3.5V
3V
2.5V
2V
10
+150°C
1
ZXM61P02F
5V 4.5V 4V
-VGS
3.5V
3V
2.5V
2V
100m
0.1
1 10
-VDS - Drain-Source Voltage (V)
Output Characteristics
100
100m
0.1
10
-VDS - Drain-Source Voltage (V)
Output Characteristics
100
10
T=+150°C
T=+25°C
1
100m
VDS=-10V
10m
1.5 2.5 3.5 4.5
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
10
Vg=-2.5V
Vg=-4.5V
1
100m
0.1
1
-ID - Drain Current (A)
10
On-Resistance v Drain Current
1.7
RDS(on)
1.5
VGS=-4.5V
1.3 ID=-0.61A
1.1
0.9 VGS=VDS
ID=-250uA
0.7 VGS(th)
0.5
-100
0
+100
+200
Tj - Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
10
1
100m
T=+150°C
T=+25°C
10m
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JULY 1999
77
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXM61P02.PDF ] | |
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