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What is VTT1115?

This electronic component, produced by the manufacturer "PerkinElmer Optoelectronics", performs the same function as ".050 NPN Phototransistors".


VTT1115 Datasheet PDF - PerkinElmer Optoelectronics

Part Number VTT1115
Description .050 NPN Phototransistors
Manufacturers PerkinElmer Optoelectronics 
Logo PerkinElmer Optoelectronics Logo 


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.050" NPN Phototransistors
TO-46 Lensed Package
VTT1115, 16, 17
PACKAGE DIMENSIONS inch (mm)
CASE 3 TO-46 HERMETIC (LENSED)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE11xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 110°C
-40°C to 110°C
250 mW
3.12 mW/°C
200 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Part Number
VTT1115
VTT1116
VTT1117
Light Current
lC
mA
Min. Max.
H
fc (mW/cm2)
VCE = 5.0 V
1.0 —
2.0 —
4.0 —
20 (1)
20 (1)
20 (1)
Dark Current
lCEO
H=0
(nA) VCE
Max. (Volts)
100 10
100 10
100 10
Collector
Breakdown
VBR(CEO)
lC = 100 µA
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
VBR(ECO)
lE = 100 µA
H=0
Volts, Min.
6.0
4.0
4.0
Saturation
Voltage
VCE(SAT)
lC = 1.0 mA
H = 400 fc
Rise/Fall Time
tR/tF
lC = 1.0 mA
RL = 100
Angular
Response θ1/2
Volts, Max. µsec, Typ.
Typ.
0.40 5.0 ±15°
0.40 8.0 ±15°
0.40 8.0 ±15°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
103


Part Details

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