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PDF UPA862TD Data sheet ( Hoja de datos )
| Número de pieza | UPA862TD | |
| Descripción | NECs NPN SILICON RF TWIN TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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NEC's NPN SILICON RF
TWIN TRANSISTOR
UPA862TD
FEATURES
• LOW VOLTAGE, LOW CURRENT OPERATION
• SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE:
Just 0.50 mm high
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
• IDEAL FOR 1-2 GHz OSCILLATORS
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN
high frequency silicon bipolar chip. The NE851 is an excellent
oscillator chip, featuring low 1/f noise and high immunity to
pushing effects. The NE685 is an excellent buffer transistor,
featuring low noise and high gain. NEC's new ultra small TD
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
OUTLINE DIMENSIONS (Units in mm)
Package Outline TD
(TOP VIEW)
1.0±0.05
0.8 +0.07
-0.05
(Top View)
C1 1 Q1
6 B1
E1 2
5 E2
C2 3 Q2
4 B2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
ICBO
IEBO
hFE
fT
Cre
|S21E|2
NF
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain1 at VCE = 3 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA
fT Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
Cre Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
|S21E|2 Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz
|S21|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz
NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
UNITS
nA
nA
GHz
pF
dB
dB
nA
nA
GHz
pF
dB
dB
dB
UPA862TD
TD
MIN TYP
75 110
10 12
0.4
7 8.5
1.5
100 120
5.0 6.5
0.6
3.0 4.0
4.5 5.5
1.9
MAX
100
100
150
0.7
2.5
600
600
145
0.8
2.5
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories
1 page  
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 1 V
IC = 10 mA
30
25 MSG
MAG
20
15
10
|S21e|2
5
0
0.1 1
Frequency, f (GHz)
10
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 2 V
IC = 10 mA
30
MSG
25
MAG
20
15
10 |S21e|2
5
0
0.1 1 10
Frequency, f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 3 V
IC = 10 mA
30
MSG
25
MAG
20
15
10 |S21e|2
5
0
0.1 1 10
Frequency, f (GHz)
Q2
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 1 V
IC = 5 mA
30
25
MSG
20
MAG
15
10
5
|S21e|2
0
0.1 1 10
Frequency, f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 1 V
IC = 15 mA
30
25 MSG
MAG
20
15
10
5 |S21e|2
0
0.1 1
Frequency, f (GHz)
10
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 2 V
IC = 5 mA
30
25
MSG
20 MAG
15
10
5
|S21e|2
0
0.1 1 10
Frequency, f (GHz)
5 Page 
UPA862TD
SCHEMATIC
Pin_1
Pin_2
Pin_3
LC
0.01 nH
C_C1E1
0.05 pF
LE
0.01 nH
LC
0.01 nH
0.1 pF
C_C1B2
0.03 pF
LC1
1.2 nH
CCE1
0.28 pF
CCBPKG1
0.07 pF
CCB1
LB1
Q1 1.1 nH
LB
0.01 nH
LE1
0.6 nH
C_E1C2
0.05 pF
LC2
0.8 nH
CCE2
0.25 pF
CCB2
0.01 pF
C_E1B2
0.1 pF
LE2
0.5 nH
C_B1B2
0.01 pF
C_B2E2
0.01 pF
LE
0.01 nH
Q2
LB2
0.6 nH
LB
0.01 nH
Pin_6
Pin_5
Pin_4
0.03 pF
CCEPKG2
0.1 pF
CCBPKG2
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias:
Date:
VCE = 0.5 V to 2.5 V, IC = 1 mA to 20 mA
08/03
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/04/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet UPA862TD.PDF ] | |
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