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What is UPA834TF?

This electronic component, produced by the manufacturer "NEC", performs the same function as "NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE".


UPA834TF Datasheet PDF - NEC

Part Number UPA834TF
Description NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
Manufacturers NEC 
Logo NEC Logo 


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PRELIMINARY DATA SHEET
Silicon Transistor
µPA834TF
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
DESCRIPTION
The µPA834TF has two different built-in transistors (Q1
and Q2) for low noise amplification in the VHF band to UHF
band.
FEATURES
• Low noise
Q1 : NF = 1.4 dB TYP., Q2 : NF = 1.2 dB TYP.
@f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain
Q1 : |S21e|2 = 12.0 dB TYP. Q2 : |S21e|2 = 9.0 dB TYP.
@f = 1 GHz, VCE = 3 V, IC = 7 mA
• 6-pin thin-type small mini mold package
• 2 different transistors on-chip (2SC4227, 2SC4226)
ON-CHIP TRANSISTORS
3-pin small mini mold part No.
Q1
2SC4227
Q2
2SC4226
The µPA831TF features the Q1 and Q2 in inverted positions.
ORDERING INFORMATION
PART NUMBER
µPA834TF
µPA834TF-T1
QUANTITY
PACKING STYLE
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
PACKAGE DRAWINGS (Unit:mm)
2.10±0.1
1.25±0.1
PIN CONFIGURATION (Top View)
B1 E2 B2
6 54
Q1 Q2
12 3
C1 E1 C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, because the high-frequency
process is used for this device.
The information in this document is subject to change without notice.
Document No. P12726EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
© 1997

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UPA834TF equivalent
Q1
DC Current Gain vs. Collector Current
200
VCE = 3 V
100
50
20
10
0.5
1 5 10
Collector current IC (mA)
50
Feedback Capacitance vs. Collector to Base Voltage
5.0
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
1
2
5 10 20
50
Collector to base voltage VCB (V)
Gain Bandwidth Product vs. Collector Current
10
VCE = 3 V
f = 1 GHz
8
6
4
2
0
0.5 1.0
5.0 10
Collector current IC (mA)
50
µPA834TF
Q2
DC Current Gain vs. Collector Current
200
VCE = 3 V
100
50
20
10
0.5
1 5 10
Collector current IC (mA)
50
Feedback Capacitance vs. Collector to Base Voltage
5.0
f = 1 MHZ
2.0
1.0
0.5
0.2
0.1 1
2
5 10 20
50
Collector to base voltage VCB (V)
Gain Bandwidth Product vs. Collector Current
20
VCE = 3 V
f = 1.0 GHZ
10
5
2
1
0.5 1
5 10
Collector current IC (mA)
50
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UPA834TF electronic component.


Information Total 12 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
UPA834TFThe function is NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE. NECNEC

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