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Número de pieza | UPA833TF | |
Descripción | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPA833TF (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! PRELIMINARY DATA SHEET
Silicon Transistor
µPA833TF
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
DESCRIPTION
The µPA833TF has two different built-in transistors (Q1
and Q2) for low noise amplification in the VHF band to UHF
band.
FEATURES
• Low noise
Q1 : NF = 1.7 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA
• High gain
Q1 : |S21e|2 = 3.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
Q2 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA
• 6-pin thin-type small mini mold package
• 2 different transistors on-chip (2SC5193, 2SC4959)
ON-CHIP TRANSISTORS
3-pin small mini mold part No.
Q1
2SC5193
Q2
2SC4959
The µPA836TF features the Q1 and Q2 in inverted positions.
ORDERING INFORMATION
PART NUMBER
µPA833TF
µPA833TF-T1
QUANTITY
PACKING STYLE
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
PACKAGE DRAWINGS (Unit:mm)
2.10±0.1
1.25±0.1
PIN CONFIGURATION (Top View)
B1 E2 B2
6 54
Q1 Q2
12 3
C1 E1 C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, because the high-frequency
process is used for this device.
The information in this document is subject to change without notice.
Document No. P12725EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
© 1997
1 page Q1
DC Current Gain vs. Collector Current
200
VCE = 1 V
100
0
0.1 0.2
0.5 1 2 5 10 20
Collector current IC (mA)
50 100
Gain Bandwidth Product vs. Collector Current
10
f = 2 GHZ
VCE = 1 V
5
0
1
23
5 7 10
Collector current IC (mA)
Insertion Power Gain vs. Collector Current
10
f = 2 GHZ
VCE = 1 V
5
0
1
23
5 7 10
Collector current IC (mA)
µPA833TF
Q2
DC Current Gain vs. Collector Current
200
5V
VCE = 3 V
100
0
0.1 0.2
0.5 1 2 5 10 20
Collector current IC (mA)
50 100
Gain Bandwidth Product vs. Collector Current
14
f = 2 GHz
12 5 V
3V
10
8
VCE = 1 V
6
4
2
0.5 1 2
5 10 20
Collector current IC (mA)
50
Insertion Power Gain vs. Collector Current
10
f = 2 GHz
5V
8 3V
VCE = 1 V
6
4
2
0.5 2
5 10 20
Collector current IC (mA)
50
5
5 Page µPA833TF
S-PARAMETERS Q2
VCE = 3 V, IC = 1 mA, Z0 = 50 Ω
FREQUENCY
S11
GHz
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
MAG
.98
.97
.95
.93
.90
.87
.84
.81
.77
.73
.69
.65
.62
.58
.54
.51
.47
.45
.42
.40
.38
.36
.35
.34
.33
.32
.32
.32
.32
.33
ANG
−5.93
−11.82
−17.85
−23.59
−29.61
−35.62
−41.49
−47.40
−53.49
−59.00
−65.20
−71.05
−77.22
−83.22
−89.53
−95.27
−101.29
−107.59
−114.02
−120.45
−127.04
−133.41
−139.83
−146.46
−153.17
−159.96
−166.01
−172.06
−177.98
177.01
VCE = 3 V, IC = 3 mA, Z0 = 50 Ω
FREQUENCY
S11
GHz
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
MAG
.93
.90
.84
.79
.72
.66
.59
.53
.48
.43
.38
.34
.31
.28
.26
.24
.22
.21
.20
.19
.18
.18
.18
.18
.19
.20
.20
.21
.22
.24
ANG
−9.39
−18.39
−27.39
−35.83
−44.06
−51.67
−58.86
−65.57
−71.57
−77.20
−82.70
−87.82
−93.49
−98.65
−104.50
−110.31
−116.75
−123.46
−130.51
−137.84
−145.47
−152.73
−160.13
−167.47
−174.18
179.79
173.96
168.73
163.65
159.82
MAG
2.43
2.41
2.42
2.39
2.38
2.37
2.34
2.32
2.32
2.26
2.25
2.21
2.17
2.15
2.13
2.07
2.02
1.99
1.95
1.90
1.87
1.83
1.78
1.74
1.71
1.68
1.64
1.61
1.58
1.54
S21
ANG
171.79
164.40
157.59
151.04
144.91
139.49
133.87
128.66
123.12
118.06
113.30
108.31
103.81
99.18
94.49
90.14
86.01
82.00
78.38
74.87
70.82
67.34
63.84
60.75
57.60
54.38
51.35
48.28
45.54
42.57
MAG
6.76
6.46
6.32
6.06
5.82
5.54
5.28
5.01
4.72
4.45
4.20
3.95
3.74
3.55
3.37
3.21
3.06
2.94
2.81
2.71
2.61
2.52
2.44
2.36
2.29
2.23
2.16
2.10
2.05
1.99
S21
ANG
166.53
155.80
146.52
138.21
130.60
123.94
117.07
111.07
105.46
100.46
95.95
91.74
87.96
84.35
80.85
77.72
74.57
71.63
68.84
66.02
63.33
60.80
58.00
55.57
53.07
50.72
48.10
45.81
43.41
41.14
MAG
.02
.04
.05
.07
.09
.10
.11
.12
.13
.14
.15
.16
.16
.17
.17
.18
.18
.18
.19
.19
.19
.20
.20
.20
.21
.21
.22
.22
.23
.23
S12
ANG
85.64
80.86
76.45
72.26
68.73
64.78
61.52
58.06
55.30
52.86
50.42
48.61
46.62
45.21
43.82
42.57
41.68
40.66
40.08
39.57
39.19
38.84
38.49
38.49
38.43
38.28
38.20
38.44
38.28
38.11
MAG
.02
.03
.05
.06
.07
.08
.09
.10
.10
.11
.12
.13
.13
.14
.15
.15
.16
.17
.18
.18
.19
.20
.21
.22
.22
.23
.24
.25
.26
.26
S12
ANG
82.60
76.86
71.65
67.47
64.58
61.95
60.46
59.12
57.98
57.39
56.96
56.54
56.14
55.72
55.21
54.91
54.46
53.91
53.57
53.01
52.38
51.91
51.17
50.80
49.89
49.17
48.35
47.49
46.43
45.56
MAG
.99
.99
.97
.95
.93
.90
.87
.85
.82
.78
.76
.73
.70
.68
.66
.63
.61
.59
.57
.55
.53
.51
.50
.48
.46
.45
.43
.41
.40
.38
S22
ANG
−3.75
−7.53
−11.10
−14.56
−17.91
−21.19
−23.71
−26.91
−29.05
−31.52
−33.73
−35.51
−37.59
−39.34
−41.12
−42.89
−44.56
−46.38
−47.99
−49.87
−51.49
−53.44
−55.39
−57.67
−59.91
−62.31
−64.97
−67.87
−70.94
−74.21
MAG
.98
.94
.89
.83
.77
.72
.68
.64
.60
.57
.55
.52
.50
.48
.46
.44
.43
.41
.39
.38
.36
.35
.33
.32
.30
.28
.27
.25
.24
.22
S22
ANG
−7.24
−13.64
−18.91
−23.49
−26.46
−29.65
−31.43
−33.17
−34.36
−35.31
−36.47
−37.08
−37.96
−38.83
−39.70
−40.63
−41.65
−42.70
−43.76
−44.95
−46.23
−47.64
−49.19
−50.82
−52.82
−54.67
−56.94
−59.46
−62.59
−65.40
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet UPA833TF.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPA833TF | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE | NEC |
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