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What is UPA831TC?

This electronic component, produced by the manufacturer "NEC", performs the same function as "NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE".


UPA831TC Datasheet PDF - NEC

Part Number UPA831TC
Description NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA831TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
DESCRIPTION
The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
UHF band.
FEATURES
• Low noise
Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP.
@f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain
Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S21e|2 = 12.0 dB TYP.
@f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• 2 different built-in transistors (2SC5006, 2SC5007)
BUILT-IN TRANSISTORS
3-pin ultra super minimold part No.
Q1
2SC5006
Q2
2SC5007
ORDERING INFORMATION
Part Number
Package
µPA831TC
µPA831TC-T1
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Taping products
(3 kp/reel)
Supplying Form
8 mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation
side of the tape.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPA831TC.)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14554EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999

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UPA831TC equivalent
1 000
Q1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
1 000
µPA831TC
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
10
0.1
1 10
Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7.00 VCE = 3 V
f = 1 GHz
6.00
5.00
4.00
3.00
2.00
1.00
0.00
1
10
Collector Current IC (mA)
100
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14.00
VCE = 3 V
f = 1 GHz
12.00
10.00
8.00
6.00
4.00
2.00
1 10 100
Collector Current IC (mA)
10
0.1
1
Collector Current IC (mA)
10
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
8.00 VCE = 3 V
7.00 f = 1 GHz
6.00
5.00
4.00
3.00
2.00
1.00
0.00
1
10
Collector Current IC (mA)
100
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
16.00 VCE = 3 V
f = 1 GHz
14.00
12.00
10.00
8.00
6.00
4.00
2.00
1 10
Collector Current IC (mA)
100
Data Sheet P14554EJ1V0DS00
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UPA831TC electronic component.


Information Total 16 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
UPA831TCThe function is NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE. NECNEC

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