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What is S1230AB-70?

This electronic component, produced by the manufacturer "Dallas Semiconducotr", performs the same function as "256k Nonvolatile SRAM".


S1230AB-70 Datasheet PDF - Dallas Semiconducotr

Part Number S1230AB-70
Description 256k Nonvolatile SRAM
Manufacturers Dallas Semiconducotr 
Logo Dallas Semiconducotr Logo 


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Total 12 Pages



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No Preview Available ! S1230AB-70 datasheet, circuit

www.dalsemi.com
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range
(DS1230AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile
SRAM products
- Detachment feature on PowerCap allows
easy removal using a regular screwdriver
DS1230Y/AB
256k Nonvolatile SRAM
PIN ASSIGNMENT
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 DQ7
18 DQ6
17
DQ5
16 DQ4
15 DQ3
28-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
NC
NC
NC
NC
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
1
2
3
4
5
6
7
8
9
10
11
12
13 GND VBAT
14
15
16
17
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC
GND
- Power (+5V)
- Ground
NC - No Connect
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S1230AB-70 equivalent
AC ELECTRICAL CHARACTERISTICS (cont'd)
DS1230AB-120 DS1230AB-150
PARAMETER SYMBOL DS1230Y-120 DS1230Y-150
MIN MAX MIN MAX
Read Cycle
Time
tRC 120
150
Access Time
OE to Output
Valid
tACC
tOE
120 150
60 70
CE to Output
Valid
tCO
120 150
OE or CE to
tCOE
5
Output Active
5
Output High Z
from
Deselection
tOD
35 35
Output Hold
tOH 5
from Address
Change
5
Write Cycle
Time
tWC 120
150
Write Pulse
Width
tWP 90
100
Address Setup tAW 0
Time
0
Write Recovery
Time
tWR1
tWR2
5
15
5
15
Output High Z
tODW
35
35
from WE
Output Active tOEW 5
from WE
5
Data Setup
Time
tDS 50
60
Data Hold Time
tDH1
tDH2
0
10
0
10
DS1230AB-200
DS1230Y-200
MIN MAX
200
200
100
200
5
35
5
200
100
0
5
15
35
5
80
0
10
DS1230Y/AB
UNITS NOTES
ns
ns
ns
ns
ns 5
ns 5
ns
ns
ns 3
ns
ns 12
13
ns 5
ns 5
ns 4
ns 12
13
5 of 12


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for S1230AB-70 electronic component.


Information Total 12 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
S1230AB-70The function is 256k Nonvolatile SRAM. Dallas SemiconducotrDallas Semiconducotr

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