BTS725L1 Datasheet PDF - Siemens Semiconductor Group
Part Number | BTS725L1 | |
Description | Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | |
Manufacturers | Siemens Semiconductor Group | |
Logo | ||
There is a preview and BTS725L1 download ( pdf file ) link at the bottom of this page. Total 14 Pages |
Preview 1 page No Preview Available ! PROFET® Preliminary BTS 725 L1
Smart Two Channel Highside Power Switch
Product Summary
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Current limitation
IL(SCr)
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
one
60
4.0
17
43
5.0 ... 24
two parallel
30
6.0
17
V
V
mΩ
A
A
Application
• µC compatible power switch with diagnostic feedback
for 12 V DC grounded loads
• Most suitable for resistive and lamp loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
7
17,18
13,14
4
8
2
6
5,9
Symbol
Vbb
IN1
IN2
OUT1
OUT2
ST1
ST2
GND1
GND2
N.C.
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Input 1,2, activates channel 1,2 in case of
logic high signal
Output 1,2, protected high-side power output
of channel 1,2. Design the wiring for the max.
short circuit current
Diagnostic feedback 1,2 of channel 1,2,
open drain, low on failure
Ground 1 of chip 1 (channel 1)
Ground 2 of chip 2 (channel 2)
Not Connected
Pin configuration (top view)
Vbb
GND1
IN1
ST1
N.C.
GND2
IN2
ST2
N.C.
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT1
16 Vbb
15 Vbb
14 OUT2
13 OUT2
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
03.96
|
|
Preliminary BTS 725 L1
Parameter and Conditions, each of the two channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
Unit
min typ max
Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 11)
each channel, Tj =-40°C:
Tj =25°C:
Tj =+150°C:
two parallel channels
Repetitive short circuit current limit,
Tj = Tjt
each channel
two parallel channels
(see timing diagrams, page 11)
Initial short circuit shutdown time
Tj,start =-40°C:
Tj,start = 25°C:
(see page 10 and timing diagrams on page 11)
Thermal overload trip temperature
Thermal hysteresis
IL(SCp)
27 37 47
20 30 40
12 18 25
twice the current of one channel
IL(SCr)
-- 17
-- 17
--
--
toff(SC)
-- 5 --
-- 4 --
Tjt 150 -- --
∆Tjt
-- 10
--
A
A
ms
°C
K
Reverse Battery
Reverse battery voltage 10)
Drain-source diode voltage (Vout > Vbb)
IL = - 4.0 A, Tj = +150°C
-Vbb
-VON
-- --
-- 610
32 V
-- mV
Diagnostic Characteristics
Open load detection current, (on-condition)
each channel, Tj = -40°C:
Tj = 25°C:
Tj = +150°C:
two parallel channels
Open load detection voltage11) Tj =-40..+150°C:
Internal output pull down
(OUT to GND), VOUT = 5 V
Tj =-40..+150°C:
I L (OL)4
10 -- 800
10 -- 600
10 -- 600
twice the current of one channel
VOUT(OL)
234
RO 4 10 30
mA
V
kΩ
10) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
11) External pull up resistor required for open load detection in off state.
Semiconductor Group
5
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Information | Total 14 Pages | |
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