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PDF BTS721L1 Data sheet ( Hoja de datos )
| Número de pieza | BTS721L1 | |
| Descripción | Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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PROFET® BTS721L1
Smart Four Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Current limitation IL(SCr)
Vbb(AZ)
Vbb(on)
43 V
5.0 ... 34 V
one two parallel four parallel
100 50
25 mΩ
2.9 4.3 6.3 A
8 8 8A
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
Symbol
Vbb
IN1
IN2
IN3
IN4
OUT1
OUT2
OUT3
OUT4
ST1/2
ST3/4
GND1/2
GND3/4
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
Input 1 .. 4, activates channel 1 .. 4 in case of
logic high signal
Output 1 .. 4, protected high-side power output
of channel 1 .. 4. Design the wiring for the
max. short circuit current
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
Ground 1/2 of chip 1 (channel 1 and channel 2)
Ground 3/4 of chip 2 (channel 3 and channel 4)
Pin configuration (top view)
Vbb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT2
16 Vbb
15 Vbb
14 OUT3
13 OUT4
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
06.96
1 page  
Parameter and Conditions, each of the four channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Standby current, all channels off
Tj =25°C:
VIN = 0
Tj =150°C:
Leakage output current (included in Ibb(off))
VIN = 0
Operating current 9), VIN = 5V, Tj =-40...+150°C
IGND = IGND1/2 + IGND3/4,
one channel on:
four channels on:
Ibb(off)
IL(off)
IGND
BTS721L1
Values
Unit
min typ max
-- 28 60 µA
-- 44 70
-- -- 12 µA
-- 2 3 mA
-- 8 12
Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 12)
each channel, Tj =-40°C:
Tj =25°C:
Tj =+150°C:
two parallel channels
four parallel channels
Repetitive short circuit current limit,
Tj = Tjt
each channel
two parallel channels
four parallel channels
(see timing diagrams, page 12)
Initial short circuit shutdown time
Tj,start =-40°C:
Tj,start = 25°C:
(see page 11 and timing diagrams on page 12)
Output clamp (inductive load switch off)10)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
IL(SCp)
11 18 25
9 14 22
5 8 14
twice the current of one channel
four times the current of one channel
IL(SCr)
-- 8 --
-- 8 --
-- 8 --
toff(SC)
-- 3.8
-- 3
--
--
VON(CL)
Tjt
∆Tjt
-- 47
150 --
-- 10
--
--
--
A
A
ms
V
°C
K
Reverse Battery
Reverse battery voltage 11)
Drain-source diode voltage (Vout > Vbb)
IL = - 2.9 A, Tj = +150°C
-Vbb
-VON
-- --
-- 610
32 V
-- mV
9) Add IST, if IST > 0
10) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
11) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Semiconductor Group
5
5 Page 
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mOhm]
300
BTS721L1
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1...4 = low
Ibb(off) [µA]
60
250 50
200
Tj = 150°C
150
85°C
100 25°C
-40°C
50
40
30
20
10
0
0 10 20 30 40
Vbb [V]
Typ. open load detection current
IL(OL) = f (Vbb,Tj ); IN = high
IL(OL) [mA]
220
200 -40°C
180
160
25°C
140
120
85°C
100
80 Tj = 150°C
60
40
20
0
0 5 10 15 20 25 30
Vbb [V]
0
-50 0 50 100 150 200
Tj [°C]
Typ. initial short circuit shutdown time
toff(SC) = f (Tj,start ); Vbb =12 V
toff(SC) [msec]
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150 200
Tj,start [°C]
Semiconductor Group
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet BTS721L1.PDF ] | |
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