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PDF BTS650P Data sheet ( Hoja de datos )
| Número de pieza | BTS650P | |
| Descripción | Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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PROFET® BTS650P
Smart Highside High Current Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Reverse battery protection
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
62 V
42 V
5.0 ... 34 V
6.0 mΩ
70 A
130 A
14 000
TO-220AB/7
Application
• Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and
discrete circuits
77
1
Standard
1
SMD
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
IIN Temperature
sensor
VIN
V IS
Logic GND
I IS
IS
5
RIS
PROFET®
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Semiconductor Group
Page 1 of 16
1998-Nov.-2
1 page  
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions
Short circuit current limit (Tab to pins 1,2,6,7)
VON = 12 V, time until shutdown max. 350 µs Tc =-40°C:
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 16)
(inductive load switch off)
IL= 40 mA:
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
IL(SC)
IL(SC)
IL(SC)
td(SC)
-VOUT(CL)
VON(CL)
VON(SC)
Tjt
∆Tjt
Reverse Battery
Reverse battery voltage 17)
On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 °C:
Vbb = -12V, VIN= 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C:
Integrated resistor in Vbb line
-Vbb
RON(rev)
Rbb
BTS650P
Values
Unit
min typ max
-- 110 --
-- 130 180
65 115 --
A
80 -- 350 µs
14 16.5 20 V
39 42 47 V
-- 6
150 --
-- 10
-- V
-- °C
-- K
-- -- 32 V
-- 5.4 7.0 mΩ
8.9 12.3
-- 120
-- Ω
)16 This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
)17 The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation!
Increasing reverse battery voltage capability is simply possible as described on page 9.
Semiconductor Group
Page 5
1998-Nov.-2
5 Page 
Options Overview
Type
BTS
Overtemperature protection with hysteresis
Tj >150 °C, latch function23)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
Overvoltage shutdown
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -19 V typ
550P 555
650P
XX
X
X
XX
--
XX
X24) X24)
BTS650P
)23 Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
)24 Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
Semiconductor Group
Page 11
1998-Nov.-2
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BTS650P.PDF ] | |
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