BTS412B2 Datasheet PDF - Siemens Semiconductor Group
Part Number | BTS412B2 | |
Description | Smart Highside Power Switch | |
Manufacturers | Siemens Semiconductor Group | |
Logo | ||
There is a preview and BTS412B2 download ( pdf file ) link at the bottom of this page. Total 14 Pages |
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Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• CMOS diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
65 V
4.7 ... 42 V
220 mΩ
1.8 A
5A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb
3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
03.97
|
|
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback11)
Input resistance
see circuit page 6
RI
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+)
Input turn-off threshold voltage
Input threshold hysteresis
Tj =-40..+150°C: VIN(T-)
∆ VIN(T)
Off state input current (pin 2), VIN = 0.4 V
IIN(off)
On state input current (pin 2), VIN = 3.5 V
IIN(on)
Delay time for status with open load
after Input neg. slope (see diagram page 11)
td(ST OL3)
Status invalid after positive input slope
td(ST SC)
(short circuit)
Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA:
Tj =-40...+150°C, IST = +1.6 mA:
Max. status current for
current source (out):
valid status output,
current sink (in) :
Tj =-40...+150°C
VST(high)12)
VST(low)
-IST
+IST13)
BTS 412B2
Values
Unit
min typ max
-- 9 -- kΩ
1.5 --
1.0 --
-- 0.5
1 --
10 25
-- 200
2.4 V
-- V
-- V
30 µA
70 µA
-- µs
-- -- 450 µs
4.4 5.1 6.5 V
-- -- 0.4
-- -- 0.25 mA
-- -- 1.6
11)
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
VSt high ≈ Vbb during undervoltage shutdown
13) No current sink capability during undervoltage shutdown
Semiconductor Group
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BTS412B2 electronic component. |
Information | Total 14 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ BTS412B2.PDF Datasheet ] |
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