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What is BTS412B2?

This electronic component, produced by the manufacturer "Siemens Semiconductor Group", performs the same function as "Smart Highside Power Switch".


BTS412B2 Datasheet PDF - Siemens Semiconductor Group

Part Number BTS412B2
Description Smart Highside Power Switch
Manufacturers Siemens Semiconductor Group 
Logo Siemens Semiconductor Group Logo 


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Total 14 Pages



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PROFET® BTS 412B2
Smart Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
CMOS diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
65 V
4.7 ... 42 V
220 m
1.8 A
5A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb
3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
03.97

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BTS412B2 equivalent
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback11)
Input resistance
see circuit page 6
RI
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+)
Input turn-off threshold voltage
Input threshold hysteresis
Tj =-40..+150°C: VIN(T-)
VIN(T)
Off state input current (pin 2), VIN = 0.4 V
IIN(off)
On state input current (pin 2), VIN = 3.5 V
IIN(on)
Delay time for status with open load
after Input neg. slope (see diagram page 11)
td(ST OL3)
Status invalid after positive input slope
td(ST SC)
(short circuit)
Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA:
Tj =-40...+150°C, IST = +1.6 mA:
Max. status current for
current source (out):
valid status output,
current sink (in) :
Tj =-40...+150°C
VST(high)12)
VST(low)
-IST
+IST13)
BTS 412B2
Values
Unit
min typ max
-- 9 -- k
1.5 --
1.0 --
-- 0.5
1 --
10 25
-- 200
2.4 V
-- V
-- V
30 µA
70 µA
-- µs
-- -- 450 µs
4.4 5.1 6.5 V
-- -- 0.4
-- -- 0.25 mA
-- -- 1.6
11)
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
VSt high Vbb during undervoltage shutdown
13) No current sink capability during undervoltage shutdown
Semiconductor Group
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BTS412B2 electronic component.


Information Total 14 Pages
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