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PDF BTS410F2 Data sheet ( Hoja de datos )
| Número de pieza | BTS410F2 | |
| Descripción | Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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PROFET® BTS 410 F2
Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
65 V
4.7 ... 42 V
220 mΩ
1.8 A
2.7 A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Semiconductor Group
1
03.97
1 page  
Truth Table
BTS 410 F2
Input- Output
Status
level
Normal
operation
Open load
Short circuit
to GND
Short circuit
to Vbb
Overtem-
perature
Under-
voltage
Overvoltage
L
H
L
H
L
H
L
H
L
H
L
H
L
H
level
L
H
12)
H
L
L
H
H
L
L
L
L
L
L
412 410 410 410 410
B2 D2 E2/F2 G2 H2
HHHH
HHHH
L HHH
HLLL
HHHH
L LLH
L HHH
H H (L13)) H (L13)) H (L13))
LLLL
LL
L14)
L14)
L14)
L14)
L
H
H
L
H
H
L LHH
L LHH
H
H
L
H
H
L
L
H
L
L
H
H
H
H
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
12) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
13)
14)
Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
No current sink capability during undervoltage shutdown
Semiconductor Group
5
5 Page 
Figure 3c: Short circuit while on:
IN
ST
V OUT
I L **)
**) current peak approx. 20 µs
Figure 4a: Overtemperature,
Reset if (IN=low) and (Tj<Tjt)
IN
ST
V
OUT
T
J
*) ST goes high , when VIN=low and Tj<Tjt
BTS 410 F2
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
t
ST d(ST)
V
OUT
I
L
t
open
t
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
td(ST OL1)
ST
t d(ST OL2)
V
OUT
I normal
L
open
normal
t
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
t
Semiconductor Group
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BTS410F2.PDF ] | |
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