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PDF BTS410E2 Data sheet ( Hoja de datos )
| Número de pieza | BTS410E2 | |
| Descripción | Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS410E2 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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PROFET® BTS 410 E2
Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
65 V
4.7 ... 42 V
220 mΩ
1.8 A
5A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Semiconductor Group
1
03.97
1 page  
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback11)
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+)
Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-)
Input threshold hysteresis
∆ VIN(T)
Off state input current (pin 2), VIN = 0.4 V
IIN(off)
On state input current (pin 2), VIN = 5 V
IIN(on)
Status invalid after positive input slope
td(ST SC)
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
td(ST)
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +50 uA: VST(high)
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low)
BTS 410 E2
Values
Unit
min typ max
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5
-- V
1 -- 30 µA
10 25 70 µA
-- -- 450 µs
300 -- 1400 µs
5.0 6 -- V
-- -- 0.4
11) If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
5 Page 
Figure 3b: Turn on into overload,
IN
IL
I L(SCp)
IL(SCr)
ST
Heating up may require several seconds,
Vbb - VOUT < 8.5 V typ.
Figure 3c: Short circuit while on:
IN
ST
V OUT
I L **)
**) current peak approx. 20 µs
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
BTS 410 E2
ST
V
OUT
T
tJ
t
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
t
ST d(ST)
V
OUT
I
L
t
open
t
Semiconductor Group
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BTS410E2.PDF ] | |
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