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PDF BTS110 Data sheet ( Hoja de datos )

Número de pieza BTS110
Descripción TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BTS110 Hoja de datos, Descripción, Manual

TEMPFET®
Features
q N channel
q Enhancement mode
q Temperature sensor with thyristor characteristic
q The drain pin is electrically shorted to the tab
BTS 110
123
Pin 1 2 3
GDS
Type
BTS 110
VDS
100 V
ID
10 A
RDS(on)
0.2
Package
TO-220AB
Ordering Code
C67078-A5008-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 k
Gate-source voltage
Continuous drain current, TC = 25 °C
ISO drain current
TC = 85 °C, VGS = 10 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C
Short circuit current, Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Symbol
VDS
VDGR
VGS
ID
ID-ISO
ID puls
ISC
PSCmax
Ptot
Tj, Tstg
Rth JC
Rth JA
Values
100
100
± 20
10
1.75
40
37
500
40
– 55 ... + 150
E
55/150/56
3.1
75
Unit
V
A
W
°C
K/W
Semiconductor Group
1
04.97

1 page




BTS110 pdf
Max. power dissipation Ptot = f (TC)
BTS 110
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter: VGS
Typical output characteristics ID = f (VDS)
Parameter: tp = 80 µs
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC = 25 °C
Semiconductor Group
5

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