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BTA08A-600B Datasheet PDF - ST Microelectronics

Part Number BTA08A-600B
Description 8A TRIACS
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 



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BTA08A-600B datasheet, circuit
BTA/BTB08 and T8 Series
SNUBBERLESS, LOGIC LEVEL & STANDARD
8A TRIACS
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
8
600 and 800
5 to 50
Unit
A
V
mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB08 and T8 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T8
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A2
A1 A2
G
DPAK
(T8-B)
A2
A2
G
A1
A1 A2
G
D2PAK
(T8-G)
A2
A1
A2
G
IPAK
(T8-H)
A2
A1
A2
G
TO-220AB Insulated
(BTA08)
A1
A2G
TO-220AB
(BTB08)
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
It
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
DPAK / D PAK
IPAK / TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
Tc = 110°C
Tc = 100°C
t = 20 ms
t = 16.7 ms
I t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 20 µs
Tj = 125°C
Average gate power dissipation
Tj = 125°C
Storage junction temperature range
Operating junction temperature range
September 2000 - Ed: 3
Value
8
80
84
45
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
As
A/µs
A
W
°C
1/10

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BTA08A-600B equivalent
BTA/BTB08 and T8 Series
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
10
9
8
7
6
5
4
3
2
1 IT(RMS)(A)
0
012345678
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
IT(RMS) (A)
3.5
3.0
2.5
2.0
D2PAK
(S=1cm2)
DPAK
(S=0.5cm2)
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50 75
100 125
Fig. 4: On-state characteristics (maximum
values).
ITM (A)
100
Tj max.
Vto = 0.85 V
Rd = 50 m
Tj=Tj max
10
Tj=25°C
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
10
9
8
7
6
5
4
3
2
1
0
0 25
BTB/T8
BTA
Tc(°C)
50 75
100 125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
1E-1
1E-2
DPAK/IPAK
Zth(j-a)
TO-220AB/D PAK
Zth(j-a)
1E-3
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM (A)
90
80
70
60
50
40 Repetitive
Tc=100°C
30
20
10
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10 100
t=20ms
One cycle
1000
5/10

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Information Total 10 Pages
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