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PDF IF1330 Data sheet ( Hoja de datos )
| Número de pieza | IF1330 | |
| Descripción | N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET Corporation | |
| Logotipo |  |
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01/99
B-31
IF1330
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
225 mW
1.8 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
V(BR)GSS
IGSS
VGS(OFF)
IDSS
IF1330
Min Max
Unit
Process NJ132H
Test Conditions
– 20 V IG = – 1 µA, VDS = ØV
– 0.1 nA VDS = ØV, VGS = – 10V
– 0.35 – 1.5 V VDS = 10V, ID = 0.5 nA
5 20 mA VDS = 10V, VGS = ØV
gfs
10
mS VDS = 10V, ID = 5 mA
f = 1 kHz
Ciss
20 pF VDS = 10V, ID = 5 mA
f = 1 MHz
Crss 5 pF VDS = 10V, ID = 5 mA f = 1 MHz
Typ
e¯N
2.5
nV/√Hz VDS = 10V, ID = 5 mA
f = 1 kHz
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet IF1330.PDF ] | |
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