PDF TN2106 Data sheet ( Hoja de datos )

Número de pieza	TN2106
Descripción	N-Channel Enhancement-Mode Vertical DMOS FETs
Fabricantes	Supertex Inc
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No Preview Available ! TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain ► Complementary N- and P-channel devices Applications ► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo-voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefﬁcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option TO-236AB (SOT-23) TO-92 BVDSS/BVDGS (V) TN2106 TN2106K1-G -G indicates package is RoHS compliant (‘Green’) TN2106N3-G 60 Pin Conﬁgurations RDS(ON) (max) (Ω) 2.5 VGS(th) (max) (V) 2.0 Absolute Maximum Ratings Parameter Value Drain-to-source Drain-to-gate Gate-to-source BVDSS BVDGS ±20V Operating and storage temperature -55OC to +150OC Soldering temperature* 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. DRAIN GATE SOURCE TO-236AB (SOT-23) (K1) DRAIN SOURCE GATE TO-92 (N3) Product Marking N1LW W = Code for week sealed = “Green” Packaging TO-236AB (SOT-23) (K1) TN 2106 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging TO-92 (N3) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 1 page 3-Lead TO-236AB (SOT-23) Package Outline (K1/T) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch TN2106 Top View Side View View B View B View A - A Symbol A A1 A2 b MIN 0.89 0.01 0.88 0.30 Dimension (mm) NOM - - 0.95 - MAX 1.12 0.10 1.02 0.50 JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B072208. D 2.80 2.90 3.04 E 2.10 - 2.64 E1 1.20 1.30 1.40 e 0.95 BSC e1 1.90 BSC L 0.20† 0.50 0.60 L1 0.54 REF θ 0O - 8O ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 5 5 Page

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