IRF9130 Datasheet PDF - International Rectifier
| Part Number | IRF9130 | |
| Description | TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A) | |
| Manufacturers | International Rectifier | |
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There is a preview and IRF9130 download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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PD - 90549C
IRF9130
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6804
JANTXV2N6804
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]
100V, P-CHANNEL
Product Summary
Part Number BVDSS
IRF9130 -100V
RDS(on) ID
0.30 Ω -11A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Units
-11
-7.0 A
-50
75 W
0.60
W/°C
±20 V
81 mJ
-11 A
7.5 mJ
-5.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01
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Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF9130
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF9130 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. 100V, 11A, P-Ch, POWER MOSFET [ Learn More ] | |
| Download | [ IRF9130.PDF Datasheet ] | |
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